Heterojunction optoelectronic devices based on the new semiconductor monolayer material on a silicon photonic platform can achieve unprecedented performances. The silicon-based nanophotonic platform provides deterministic and localized control of photons coupling to the unique monolayer material, as well as its carrier density. The direct contact between two-dimensional materials and asymmetrically doped silicon interface promises high internal quantum efficiency. The doping level in silicon can be used for altering Schottky barriers, where the doped silicon is introduced through ion implantation with carefully designed doping profile. The dramatic change of atomic structures of phase change two-dimensional materials by electrostatic doping will lead to the change of refractive index, carrier diffusion length and nonlinear coefficient, which promise new operational paradigms in the device level. The research results will be the first steps to involving novel two-dimensional materials onto active silicon photonic platform for large-scale active silicon photonic circuits and systems, towards low power optical signal processing, imaging, chemical sensor applications.

报告人简介：She joined the ECE faculty of Udel in fall 2016. She received a B.S. with honors in electrical engineering from Shanghai Jiao Tong University, and M.S. and Ph.D. degrees in electrical engineering from Columbia University. For her Ph.D., she worked on silicon based nanophotonic and optoelectronic devices. She has held positions at the Center for High Technology Materials in the University of New Mexico, Zhejiang University in China, and Alcatel-Lucent Bell Labs and Princeton University in NJ. At Bell labs, she worked on silicon photonic network-on-chip systems. She completed postdoctoral research in the Large-Scale Integrated Photonics research group at Hewlett Packard Labs in Palo Alto, CA, studying large-scale nonlinear photonic circuits. She also worked as a PRISM postdoc fellow work at Princeton University, studying solution processed chalcogenide materials with laser processing.